Semiconductor Fabrication
From raw silicon to tested die · 41 steps · 11 chokepoints
1
HIGH
Mine Quartz
mine
High-purity quartz from Spruce Pine NC (70-80% global supply). Also Sibelco, Jiangsu Pacific Quartz.
2
Reduce to Metallurgical Si
reduce
Electric arc furnace at 2000C. 98-99% pure MGS. China ~70% of production.
3
Purify to Polysilicon
purify
Siemens process: trichlorosilane distillation to 9N-11N purity. Most energy-intensive step (100-200 kWh/kg). Solar uses 90%, chips 10% but highest purity.
4
Grow Single Crystal Ingot
grow
Czochralski method: 1425C melt, seed pull over 24-72hrs. 300mm diameter, 200-300kg. Any vibration/impurity = defects. Float Zone alternative for power devices.
5
Slice into Wafers
slice
Diamond wire saw, lapping, etching, CMP to <0.5nm RMS. Epitaxial layer optional.
6
CRITICAL
Wafer Enters Fab
enter_fab
Wafer enters cleanroom. 2-3 months, 50-100 layer cycles ahead.
7
HIGH
Deposit Thin Film
deposit
Grow or deposit oxide/nitride/metal/high-k on wafer. Multiple methods with distinct equipment and suppliers.
CVD / PECVD
dep_cvd
Chemical Vapor Deposition. PECVD for low-temp films. Workhorse for oxide, nitride, polysilicon.
HDPCVD (high-aspect-ratio)
dep_hdpcvd
High Density Plasma CVD: simultaneous dep+etch prevents pinch-off voids in sub-0.8um features. Critical for 3D NAND and advanced logic gap-fill.
ALD (atomic precision)
dep_ald
Atomic Layer Deposition: self-limiting surface reactions for angstrom-level control. Essential for high-k gates, Mo deposition, barrier layers. ASM International leads.
PVD / Sputtering
dep_pvd
Physical Vapor Deposition for metal films (Cu seed, barrier metals, interconnect). Applied Materials Endura platform dominates.
8
Coat with Photoresist
coat
Spin-coat resist, soft-bake. 5 Japanese companies control ~90%. Chemically amplified resists (CAR) with photoacid generators.
9
Lithography (Expose)
litho
Pattern transfer through photomask onto resist. Resolution depends on wavelength.
DUV (ArF immersion)
litho_duv
ArF 193nm through water, effective 134nm. Enabled 45nm to 7nm. ASML 80%+, Nikon and Canon compete for mature nodes.
EUV (13.5nm)
litho_euv
Extreme UV: tin droplet laser plasma source, Bragg mirror optics in vacuum. ASML monopoly. $380M+ per tool, ~50/year. 7nm and below.
NIL (nanoimprint, emerging)
litho_nil
Canon FPA-1200NZ2C: stamps mask pattern into resist. 5nm-equiv at ~1/10th EUV cost/power. Under evaluation at TIE (Intel, Samsung, NXP). Potential EUV alternative for memory.
10
Develop
develop
Chemical developer dissolves exposed (positive) or unexposed (negative) resist.
11
Etch the Pattern
etch
Plasma or wet etch removes material where resist cleared. Selectivity and aspect ratio are key challenges.
Dielectric Etch
etch_diel
Oxide, nitride, low-k etch. Lam Flex, TEL Tactras, Applied Centura.
Conductor Etch
etch_cond
Poly-Si gates, metal interconnects. Lam Kiyo dominates. TEL Tactras.
Atomic Layer Etch
etch_ale
Self-limiting removal, atomic precision. Critical for FinFET/GAA gate formation. Lam, TEL lead.
12
Ion Implant (Dope)
implant
Accelerate dopant ions (B, P, As) into wafer. Controls transistor threshold voltage. Repeats dozens of times per chip.
13
Strip Resist & Clean
strip
O2 plasma ash or solvent strip. SC-1, SC-2, HF clean sequences. SCREEN and TEL equipment.
14
CMP (Planarize)
cmp
Chemical-mechanical polishing. Enables multi-layer chips. Now also enables hybrid bonding (angstrom flatness) and handles SiC/GaN extreme hardness.
FEOL CMP (logic, 3D NAND)
cmp_feol
Front-end-of-line: oxide/nitride polish for transistor layers. 40:1 selectivity with amino acid chemistries.
BEOL CMP (Cu interconnect)
cmp_beol
Back-end-of-line: copper damascene polish. DuPont pads dominate. Mo-specific slurries emerging.
Hybrid Bonding CMP
cmp_bond
Angstrom-level flatness for direct Cu-to-Cu bonding in 3D integration. Enables HBM4, chiplet stacking. Most demanding CMP application.
15
Inspect & Measure
inspect
Feature dimensions, alignment, defect scanning. Shifting from offline to continuous AI-driven inline monitoring.
Defect Inspection
insp_defect
Find particles, pattern defects. KLA 39xx/29xx dominates. Applied SEMVision review.
Overlay Metrology
insp_overlay
Layer-to-layer alignment. ASML YieldStar, KLA Archer.
CD Metrology
insp_cd
Critical dimension measurement. Hitachi CD-SEM leads. OCD scatterometry.
In-situ / AI Process Control
insp_insitu
Real-time sensor data (MFCs, plasma monitors, optical) feeds AI for predictive yield management. Horiba sensors, MKS MFCs. PDF Solutions, Tignis software.
16
HIGH
Wafer Probe Test
probe
Probe card needles contact each die. ATE runs test vectors. Failed dies mapped. Yield = % working.
17
Dice into Chips
dice
Backgrind to 50-100um, diamond blade or laser dice. Disco 70%+ share.
18
Package the Chip
package
Die into protective package with external connections. Fastest-growing strategic segment.
Wire Bond / Flip Chip
pkg_trad
Traditional: wire bond + mold. Flip chip: bumps directly to substrate. Still majority of production.
Fan-out (InFO, eWLB)
pkg_fanout
TSMC InFO for Apple SoCs. Wafer-level redistribution. Lower cost than interposer.
2.5D Interposer (CoWoS)
pkg_25d
Dies on silicon interposer with TSVs. TSMC CoWoS dominates AI chips (GPU + HBM). The AI packaging bottleneck.
3D / Hybrid Bonding
pkg_3d
Direct die stacking. Cu-to-Cu hybrid bonding at <10um pitch. HBM stacks 8-16 DRAM dies. Enables chiplet architectures.
Co-packaged Optics
pkg_cpo
Optical engines integrated with ASICs via TSMC COUPE platform. NVIDIA Spectrum-X, Broadcom Bailly. Replaces copper for scale-up AI networking. Market >$20B by 2036.
19
Final Test & Burn-in
final_test
Test at operating speed/temp. Burn-in screens early failures. Speed binning sorts by performance.
PCB Manufacturing
Printed circuit board fabrication — converges at board assembly · 9 steps
1
PCB Design & Layout
pcb_design
Impedance-controlled routing, signal integrity simulation. Top 4 hold ~92%: Siemens/Mentor (Xpedition), Cadence (Allegro), Altium, Zuken (CR-8000, dominant in Japan). 20-60+ layer server boards require months of design.
2
Core & Prepreg Lamination
pcb_laminate
Copper-clad laminates (CCL). Kingboard (#1 global), Shengyi (#2). High-frequency: Panasonic Megtron (server/AI dominant), Rogers (RF/5G), Isola. Doosan (monopoly on NVIDIA Blackwell server trays). Nan Ya, ITEQ, Taiwan EMC.
3
Inner Layer Imaging & Etch
pcb_inner
LDI (laser direct imaging) replacing film exposure. Orbotech/KLA (32-40% LDI share), SCREEN (#2, ~21%). Dry film photoresist: Asahi Kasei, Hitachi Chemical/Resonac, DuPont hold ~80% combined.
4
Multi-layer Lamination
pcb_stackup
Stack prepreg + etched cores under heat and pressure. 4 layers (consumer) to 60+ layers (server/networking). Equipment: Lauffer, Burkle (Germany), Kitagawa Seiki (Japan). Small niche market (~$53M).
5
Via Drilling
pcb_drill
Mechanical: Schmoll (Germany, leading), Via Mechanics (Japan), Hitachi High-Tech. Laser: Mitsubishi Electric, ESI/MKS. Han's Laser (30%+ of China market). HDI boards need multiple drill cycles.
6
Copper Plating
pcb_plate
Top 4 control >60% of ~$2.5B market. Atotech/MKS (#1, ~22%), MacDermid Alpha/Element Solutions, DuPont, JCU (Japan). Surface finish chemistry: Uyemura (>40% ENEPIG). Via fill plating critical for HDI.
7
Outer Layer Processing
pcb_outer
Pattern, plate, etch outer copper traces. mSAP for <30um line/space (IC substrates). Chemistry: MacDermid Alpha, Atotech. Same LDI and plating equipment as inner layer but tighter specs. AT&S pioneer in mSAP.
8
Solder Mask & Surface Finish
pcb_finish
Solder mask: Taiyo Ink/Taiyo Holdings >50% global share (dominant). Hitachi Chemical/Resonac #2. Surface finish (ENIG/ENEPIG/OSP): Atotech, MacDermid Alpha, Uyemura, JCU.
9
Electrical Test & Inspection
pcb_test
Flying probe: atg Luther & Maelzer/Mycronic (leading), Takaya (Japan, invented it 1987), SPEA (Italy). AOI: Orbotech/KLA (~70% bare board AOI), Koh Young (#1 in 3D SPI, 16 consecutive years). Camtek, Omron.
Optics & Photonics
Optical components and modules — converges at packaging · 6 steps · 3 chokepoints
1
Silicon Photonics Fabrication
opt_sipho
Waveguides, ring modulators, Ge photodetectors on SOI wafers. Modified CMOS at foundries: TSMC (COUPE), GlobalFoundries (Fotonix), Tower Semi (300mm), STMicroelectronics (PIC100, Crolles). Intel internal SiPho fab.
2
HIGHHIGHHIGH
III-V Laser & Amplifier Fab
opt_iiiv
InP/GaAs epitaxial growth (MOCVD/MBE). EML: Mitsubishi Electric (~50% EML chips), Lumentum, Coherent, Sumitomo Electric. VCSEL: Coherent (41%) + Lumentum (37%) = ~78%. CW lasers: Broadcom, MACOM. NVIDIA pre-allocated EML capacity past 2027.
3
Optical Fiber & Cable
opt_fiber
Preform fabrication (OVD/MCVD), fiber drawing at ~2000C, UV coating, cabling. Top 5: Corning, Prysmian, Sumitomo Electric, Furukawa, YOFC. China: YOFC (#1 preform, 30% global), Hengtong, ZTT, FiberHome.
4
Passive Optical Components
opt_passive
Lenses, thin-film filters, AWG mux/demux, isolators, WSS modules. Coherent, Lumentum, Santec (WSS). Furukawa/Proterial (>50% global ITLA share). China: O-Net Technologies, Accelink.
5
Optical Transceiver Assembly
opt_module
Laser + PD + driver IC + TIA into pluggable module. 400G/800G/1.6T. Zhongji Innolight #1 globally (~30%, ~40% of 800G). Coherent #2, Eoptolink #3 (179% YoY growth). Chinese makers hold 7 of top 10 and ~60% of 800G market.
6
Optical Test & Qualification
opt_test
BER testing, eye diagrams, insertion loss, spectral analysis. Keysight + VIAVI (~30% of $1.7B market). Anritsu, EXFO, Yokogawa (AQ6370E won ECOC 2024 award). SiPho/CPO test growing to $2B+ by 2032.
System Integration
Where semiconductor, PCB, and optical paths converge · 2 steps
1
Board Assembly
assemble
SMT pick-and-place onto PCBs. 50,000+ components/hour.
2
Product Ships
ship
Finished products: GPUs, mobile SoCs, memory modules, AI accelerators, automotive chips.
Materials & Supply Chain
Cross-cutting materials, chemicals, and components · 14 steps · 16 chokepoints
1
CRITICAL
Photoresists
mat_resist
5 Japanese companies hold ~90%. ArF, EUV, KrF resists. CAR chemistry with photoacid generators.
2
HIGHHIGH
CMP Slurries & Pads
mat_cmp
DuPont pads dominate. Entegris (Cabot), Merck, Fujifilm, Resonac slurries. Mo-specific chemistries emerging.
3
HIGHCRITICAL
Bulk & Specialty Gases
mat_gas
Bulk: N2, O2, Ar, H2, He. Specialty: NF3, WF6, SiH4. Rare: Ne, Kr, Xe. He critical for wafer cooling, leak detection, and EUV source purge. On-site generation (bulk) or delivered (specialty/rare).
4
Wet Chemicals & UPW
mat_chem
H2SO4, H2O2, NH4OH, HCl, HF, HNO3. Stella Chemifa for high-purity HF. Ultra-pure water systems.
5
CRITICALHIGHHIGH
Photomasks
mat_masks
60-100 masks per 3nm chip ($15-20M set). E-beam written, optically inspected. EUV blanks from Hoya, AGC.
6
CRITICALHIGH
EDA Software & IP
mat_eda
Synopsys + Cadence duopoly for design tools. ARM for CPU architectures. Rambus for memory interface IP.
7
HIGH
Interconnect Metals (Cu, W, Mo)
mat_metals
Cu damascene (mainstream), W (contacts), Mo (emerging at 2nm+: barrierless, lower scaled resistance). MoO2Cl2 solid precursors need heated delivery. Ru also evaluated.
8
HIGH
Substrates & Interposers
mat_substr
ABF film (Ajinomoto 90%+ share). Organic laminates (Ibiden, Shinko, Unimicron). Glass substrates emerging (Absolics/SKC, Intel licensing). Silicon interposers for CoWoS.
9
HIGH
HBM Memory Stacks
mat_hbm
SK Hynix ~50-80% share (HBM3E). Samsung, Micron ramping. 8-16 die stacks via hybrid bonding + TSV. Critical AI accelerator component.
10
HIGH
Sub-tier (EUV optics, RF, valves)
mat_subtier
EUV laser (TRUMPF), EUV optics (Zeiss), RF generators (MKS, Comet), vacuum valves (VAT 70%+), vacuum pumps (Edwards, Pfeiffer, Osaka Vacuum). Hidden monopolies.
11
HIGH
Hafnium & High-k Precursors
mat_hafnium
HfO2 is the universal high-k gate dielectric since 45nm (2007). Raw Hf metal: ATI (~45-50%), Framatome (~35-40%) of Western production — duopoly, byproduct of nuclear Zr refining. Global capacity ~140-150 tonnes/yr, ~88t produced (2024). Precursors (TDMAH/TEMAH/HfCl4): Entegris, ADEKA (sole Samsung supplier), Merck (acquired Mecaro MAP Hf), SK Trichem (sole SK Hynix supplier, TCLC JV). TCLC patent expires Nov 2026. Price surged 3-8x since 2022.
12
Glass Substrates (emerging)
mat_glass
Absolics (SKC) targeting first mass production 2025 (Georgia fab, CHIPS Act $75M). Intel $1B R&D line, 600+ patents, now licensing. Samsung targeting glass interposers by 2028.
13
HIGH
SiC & GaN Materials
mat_sic
Wide-bandgap: higher voltage, temp, switching speed. EV inverters, fast chargers, data center power. 6-inch to 8-inch transition. Wolfspeed leads substrates.
14
Equipment (scanners, etch, dep)
mat_equip
ASML (lithography), Applied Materials (broadest portfolio), Lam (etch leader), TEL (multi), KLA (inspection). ~$100B annual market.